Discrete Semiconductor Products

IPS70R2K0CEAKMA1

Obsolete

MOSFET N-CH 700V 4A TO251-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 700V 4A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPS70R2K0CEAKMA1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.8 nC
Input Capacitance (Ciss) (Max) @ Vds	163 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	PG-TO251-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
INFINEON IPS70R2K0CEAKMA1	MOSFET (Metal Oxide)	2 Ohm	700 V	42 W	10 V	N-Channel	163 pF	PG-TO251-3-11	TO-251-3 Stub Leads IPAK	Through Hole	7.8 nC	-40 °C	150 °C	20 V	4 A	3.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 700 V 4A (Tc) 42W (Tc) Through Hole PG-TO251-3-11

Technical documentation and resources