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TO-220AB PKG
Discrete Semiconductor Products

IRFB3307ZPBF

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INFINEON

POWER MOSFET, N CHANNEL, 75 V, 120 A, 0.0058 OHM, TO-220AB, THROUGH HOLE

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TO-220AB PKG
Discrete Semiconductor Products

IRFB3307ZPBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 75 V, 120 A, 0.0058 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB3307ZPBF
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4750 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)230 W
Rds On (Max) @ Id, Vgs [Max]5.8 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 14$ 2.68
Tube 1$ 3.14
10$ 2.04
100$ 1.42
500$ 1.15
1000$ 1.06
2000$ 1.01
NewarkEach 1$ 2.36
10$ 1.25
100$ 1.13
500$ 0.92
1000$ 0.84
2500$ 0.80

Description

General part information

IRFB3307 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources