
HMC784MS8GETR
ObsoleteGAAS MMIC 10 W T/R SWITCH, DC TO 4 GHZ
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HMC784MS8GETR
ObsoleteGAAS MMIC 10 W T/R SWITCH, DC TO 4 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC784MS8GETR |
|---|---|
| Circuit | SPDT |
| Frequency Range [Max] | 4 GHz |
| Frequency Range [Min] | 0 Hz |
| IIP3 | 60 dBm |
| Impedance | 50 Ohms |
| Insertion Loss | 1.3 dB |
| Isolation | 30 dB |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 C |
| P1dB | 41 dBm |
| Package / Case | 3 mm, 0.118 in |
| Package / Case | Exposed Pad, 8-MSOP, 8-TSSOP |
| RF Type | General Purpose |
| Supplier Device Package | 8-MSOP-EP |
| Test Frequency | 4 GHz |
| Topology | Reflective |
| Voltage - Supply [Max] | 8 V |
| Voltage - Supply [Min] | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | 1m+ |
Description
General part information
HMC784 Series
The HMC784AMS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels. The device can control signals from DC to 4 GHz. The design provides exceptional intermodulation performance; > +60 dBm third order intercept at +5V bias. RF1 and RF2 are reflective shorts when "OFF". On-chip circuitry allows single positive supply operation from +3 Vdc to +8 Vdc at very low DC current with control inputs compatible with CMOS logic families.ApplicationsCellular/4G InfrastructureWiMAX, WiBro & Fixed WirelessAutomotive TelematicsMobile RadioTest Equipment
Documents
Technical documentation and resources