Discrete Semiconductor Products

1SS272TE85LF

Active

DIODE ARRAY GP 80V 100MA SC61B

Discrete Semiconductor Products

Active

DIODE ARRAY GP 80V 100MA SC61B

Technical Specifications

Parameters and characteristics for this part

Specification	1SS272TE85LF

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage	500 nA
Diode Configuration	Independent
Diode Count	2
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	125 °C
Package / Case	SC-61AA
Package Name	SC-61B
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed, Small Signal
Speed - Fast Recovery (Maximum)	200 mA
Speed - Small Signal Current Max	200 mA, 200 mA, 200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	80 V
Voltage - Forward (Vf) (Max)	1.2 V

Part	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max)	Speed - Small Signal Current Max	Speed	Speed - Fast Recovery (Maximum)	Package / Case	Package Name	Mounting Type	Current - Reverse Leakage	Technology	Voltage - Forward (Vf) (Max)	Reverse Recovery Time (trr)	Diode Count	Diode Configuration	Operating Temperature - Junction (Max)
Toshiba Semiconductor and Storage 1SS272TE85LF	100 mA	80 V	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	SC-61AA	SC-61B	Surface Mount	500 nA	Standard	1.2 V	4 ns	2	Independent	125 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Diode Array 2 Independent 80 V 100mA Surface Mount SC-61AA

Technical documentation and resources

No documents available