Discrete Semiconductor Products

MPSA13 TRA TIN/LEAD

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DARLINGTON TRANSISTORS NPN 30VCBO 30VCEO 10VEBO 500MA 625MW

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Discrete Semiconductor Products

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DARLINGTON TRANSISTORS NPN 30VCBO 30VCEO 10VEBO 500MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	MPSA13 TRA TIN/LEAD

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10000
Frequency - Transition	125 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Supplier Device Package	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic
Central Semiconductor Corp MPSA13 TRA TIN/LEAD	30 V	500 mA	Through Hole	10000	125 MHz	TO-92	625 mW	100 nA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	150 °C	-65 °C	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.17
Mouser	N/A	6000	$ 0.17
		10000	$ 0.16

General part information

DARLINGTON TRANSISTORS NPN 30VCBO 30VCEO 10VEBO 500MA 625MW

Technical documentation and resources

No documents available