Discrete Semiconductor Products

1N5818-AP

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DIODE SCHOTTKY 30V 1A DO41

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Discrete Semiconductor Products

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DIODE SCHOTTKY 30V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N5818-AP

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, Axial, DO-41
Reverse Recovery Time (trr)	10 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-41
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	550 mV

Part	Current - Reverse Leakage @ Vr	Supplier Device Package	Mounting Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Speed	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Reverse Recovery Time (trr)
MCC (Micro Commercial Components) 1N5818-TP	1 mA	DO-41	Through Hole	1 A	550 mV	-55 °C	125 °C	Axial DO-204AL DO-41	200 mA 500 ns	Schottky	30 V
MCC (Micro Commercial Components) 1N5818-AP	1 mA	DO-41	Through Hole	1 A	550 mV	-55 °C	125 °C	Axial DO-204AL DO-41	200 mA 500 ns	Schottky	30 V	110 pF	10 ns
MCC (Micro Commercial Components) 1N5818-AP	1 mA	DO-41	Through Hole	1 A	550 mV	-55 °C	125 °C	Axial DO-204AL DO-41	200 mA 500 ns	Schottky	30 V	110 pF	10 ns

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General part information

Diode 30 V 1A Through Hole DO-41

Technical documentation and resources