Discrete Semiconductor Products

UF1001_T0_00001

NRND

DIODE GEN PURP 100V 10A TO220AC

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Discrete Semiconductor Products

NRND

DIODE GEN PURP 100V 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	UF1001_T0_00001

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	10 A
Voltage - Forward (Vf) (Max) @ If [Max]	1 V

Part	Current - Average Rectified (Io)	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Reverse Leakage @ Vr
Panjit International Inc. UF1001_T0_00001	10 A	TO-220AC	Through Hole	-55 °C	150 °C	80 pF	50 ns	Standard	TO-220-2	1 V	10 A	100 V	200 mA 500 ns	1 µA

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General part information

Diode 100 V 10A Through Hole TO-220AC

Technical documentation and resources

No documents available