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BAV70QBZ
Discrete Semiconductor Products

BAV70QBZ

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Nexperia USA Inc.

DUAL COMMON CATHODE HIGH-SPEED SWITCHING DIODE

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BAV70QBZ
Discrete Semiconductor Products

BAV70QBZ

Active
Nexperia USA Inc.

DUAL COMMON CATHODE HIGH-SPEED SWITCHING DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationBAV70QBZ
Current - Average Rectified (Io) (per Diode)350 mA
Current - Reverse Leakage @ Vr500 nA
Diode Configuration1 Pair Common Cathode
Mounting TypeWettable Flank, Surface Mount
Operating Temperature - Junction150 ¯C
Package / Case3-XDFN Exposed Pad
Reverse Recovery Time (trr)4 ns
Speed500 ns, 200 mA
Supplier Device PackageDFN1110D-3
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.05

Description

General part information

BAV70QB Series

Dual common cathode high-speed switching diode encapsulated in an ultra small DFN1110D-3 (SOT8015, JEDEC MO340-BA) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.