Technical Specifications
Parameters and characteristics for this part
| Specification | IGP50N60TXKSA1 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Gate Charge | 310 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 333 W |
| Supplier Device Package | PG-TO220-3-1 |
| Switching Energy | 2.6 mJ |
| Td (on/off) @ 25°C [custom] | 26 ns |
| Td (on/off) @ 25°C [custom] | 299 ns |
| Test Condition | 15 V, 7 Ohm, 50 A, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1490 | $ 4.07 | |
| Tube | 1 | $ 4.81 | ||
| 50 | $ 2.49 | |||
| 100 | $ 2.27 | |||
| 500 | $ 1.87 | |||
| 1000 | $ 1.75 | |||
| 2000 | $ 1.74 | |||
Description
General part information
IGP50N60 Series
Hard-switching 600 V, 50 A singleTRENCHSTOP™IGBT3 in TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Documents
Technical documentation and resources