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INFINEON BFP183WH6327XTSA1
Discrete Semiconductor Products

BFP760H6327XTSA1

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INFINEON

RF BIPOLAR TRANSISTORS RF BIP TRANSISTORS

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INFINEON BFP183WH6327XTSA1
Discrete Semiconductor Products

BFP760H6327XTSA1

Active
INFINEON

RF BIPOLAR TRANSISTORS RF BIP TRANSISTORS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBFP760H6327XTSA1
Current - Collector (Ic) (Max) [Max]70 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]160
Frequency - Transition45 GHz
Gain [Max]29 dB
Gain [Min]16.5 dB
Mounting TypeSurface Mount
Noise Figure (dB Typ @ f) [Max]0.95 dB
Noise Figure (dB Typ @ f) [Min]0.5 dB
Operating Temperature150 °C
Package / CaseSC-82A, SOT-343
Power - Max [Max]240 mW
Supplier Device PackagePG-SOT343-4-2
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max) [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.39
10$ 0.33
100$ 0.23
500$ 0.18
1000$ 0.15
Digi-Reel® 1$ 0.39
10$ 0.33
100$ 0.23
500$ 0.18
1000$ 0.15
N/A 11733$ 0.98
Tape & Reel (TR) 3000$ 0.15
MouserN/A 1$ 0.47
10$ 0.32
100$ 0.23
250$ 0.23
500$ 0.20
1000$ 0.18
3000$ 0.16
6000$ 0.15
NewarkEach (Supplied on Cut Tape) 1$ 0.24

Description

General part information

BFP760 Series

The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Documents

Technical documentation and resources