Discrete Semiconductor Products

BSC886N03LSGATMA1

Obsolete

MOSFET N-CH 30V 13A/65A TDSON

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 13A/65A TDSON

Technical Specifications

Parameters and characteristics for this part

Specification	BSC886N03LSGATMA1

Current - Continuous Drain (Id) @ 25°C	65 A, 13 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	39 W, 2.5 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	PG-TDSON-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
INFINEON BSC886N03LSGATMA1	Surface Mount	2.5 W 39 W	20 V	13 A 65 A	150 °C	-55 °C	6 mOhm	4.5 V 10 V	8-PowerTDFN	MOSFET (Metal Oxide)	30 V	2.2 V	N-Channel	PG-TDSON-8-1	26 nC	2100 pF

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General part information

N-Channel 30 V 13A (Ta), 65A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount PG-TDSON-8-1

Technical documentation and resources