Discrete Semiconductor Products

STA508A

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MOSFET 4N-CH 120V 6A 10SIP

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Discrete Semiconductor Products

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MOSFET 4N-CH 120V 6A 10SIP

Technical Specifications

Parameters and characteristics for this part

Specification	STA508A

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	120 V
Input Capacitance (Ciss) (Max) @ Vds [Max]	400 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	10-SIP
Power - Max	4 W, 20 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	10-SIP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Power - Max	Technology
Sanken Electric USA Inc. STA508A	4 N-Channel	400 pF	150 °C	2 V	10-SIP	120 V	6 A	200 mOhm	10-SIP	Through Hole	4 W 20 W	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 120V 6A (Ta) 4W (Ta), 20W (Tc) Through Hole 10-SIP

Technical documentation and resources