Discrete Semiconductor Products

IXFA10N80P-TRL

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MOSFET N-CH 800V 10A TO263

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Discrete Semiconductor Products

Active

MOSFET N-CH 800V 10A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXFA10N80P-TRL

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
LITTELFUSE IXFA10N80P-TRL	10 V	10 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.1 Ohm	800 V	300 W	40 nC	MOSFET (Metal Oxide)	N-Channel	30 V	150 °C	-55 °C	TO-263 (D2PAK)	5.5 V	2050 pF	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 2.11	1m+
Mouser	N/A	800	$ 2.30	1m+
Newark	Each (Supplied on Full Reel)	1	$ 2.78	1m+
		2000	$ 2.65
		4000	$ 2.46
		8000	$ 2.29
		12000	$ 2.21
		20000	$ 2.17

General part information

MOSFET N-CH 800V 10A TO263

Technical documentation and resources