Discrete Semiconductor Products

BCY79-X TIN/LEAD

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BIPOLAR TRANSISTORS - BJT PNP TRANS 45VCBO 45VCEO 5.0VEBO 340MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT PNP TRANS 45VCBO 45VCEO 5.0VEBO 340MW

Technical Specifications

Parameters and characteristics for this part

Specification	BCY79-X TIN/LEAD

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	380
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-206AA, TO-18-3 Metal Can
Power - Max [Max]	1 W
Supplier Device Package	TO-18
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	45 V

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Supplier Device Package	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic
Central Semiconductor Corp BCY79-IX PBFREE	TO-18-3 Metal Can TO-206AA	250	200 °C	-65 °C	15 nA	100 MHz	TO-18	1 W	45 V	PNP	100 mA	Through Hole	800 mV
Central Semiconductor Corp BCY79-X PBFREE	TO-18-3 Metal Can TO-206AA	380	200 °C	-65 °C	15 nA	100 MHz	TO-18	1 W	45 V	PNP	100 mA	Through Hole	800 mV
Central Semiconductor Corp BCY79-X TIN/LEAD	TO-18-3 Metal Can TO-206AA	380	200 °C	-65 °C	15 nA	100 MHz	TO-18	1 W	45 V	PNP	100 mA	Through Hole	800 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.13
Mouser	N/A	2000	$ 1.05

General part information

BIPOLAR TRANSISTORS - BJT PNP TRANS 45VCBO 45VCEO 5.0VEBO 340MW

Technical documentation and resources