Discrete Semiconductor Products

SI6467BDQ-T1-GE3

Obsolete

MOSFET P-CH 12V 6.8A 8TSSOP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 6.8A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6467BDQ-T1-GE3

Current - Continuous Drain (Id) (Ta)	6.8 A
Drain to Source Voltage (Vdss)	12 V
FET Type	P-Channel
Gate Charge (Max)	70 nC
Mounting Type	Surface Mount
Package Length	0.173 in
Package Name	8-TSSOP
Package Width	4.4 mm
Rds On (Max)	12.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	850 mV

Part	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Max)	FET Type	Package Length	Package Name	Package Width	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Mounting Type	Vgs(th) (Max)
Vishay Dale SI6467BDQ-T1-GE3	MOSFET (Metal Oxide)	12 V	70 nC	P-Channel	0.173 in	8-TSSOP	4.4 mm	6.8 A	12.5 mOhm	Surface Mount	850 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

P-Channel 12 V 6.8A (Ta) Surface Mount 8-TSSOP

Technical documentation and resources

No documents available