HMC1114PM5ETR
Active>10 W (42 DBM), 2.7 GHZ TO 3.8 GHZ, GAN POWER AMPLIFIER
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HMC1114PM5ETR
Active>10 W (42 DBM), 2.7 GHZ TO 3.8 GHZ, GAN POWER AMPLIFIER
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC1114PM5ETR |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 32-LFQFN Exposed Pad, CSP |
| Supplier Device Package | 32-LFCSP-CAV (5x5) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 500 | $ 120.14 | <2d |
Description
General part information
HMC1114 Series
TThe HMC1114PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W (up to 42 dBm) typical with up to 55% power added efficiency (PAE) across an instantaneous bandwidth range of 2.7 GHz to 3.8 GHz, at an input power (PIN) of 18 dBm. The gain flatness is <1 dB typical at small signal levels.The HMC1114PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.ApplicationsExtended battery operation for public mobile radiosPower amplifier stage for wireless infrastructureTest and measurement equipmentCommercial and military radarsGeneral-purpose transmitter amplification
Documents
Technical documentation and resources
