Discrete Semiconductor Products

IRF7555TRPBF

Obsolete

MOSFET 2P-CH 20V 4.3A MICRO8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 20V 4.3A MICRO8

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7555TRPBF

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1066 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP, 8-MSOP
Package / Case	0.118 in, 3 mm Width
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs [Max]	55 mOhm
Supplier Device Package	Micro8™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Package / Case	Mounting Type	Technology	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON IRF7555TR	20 V	8-MSOP 8-TSSOP	0.118 in 3 mm Width	Surface Mount	MOSFET (Metal Oxide)	55 mOhm	1.25 W	Micro8™	15 nC	4.3 A	Logic Level Gate	1066 pF	2 P-Channel (Dual)	1.2 V
INFINEON IRF7555TRPBF	20 V	8-MSOP 8-TSSOP	0.118 in 3 mm Width	Surface Mount	MOSFET (Metal Oxide)	55 mOhm	1.25 W	Micro8™	15 nC	4.3 A	Logic Level Gate	1066 pF	2 P-Channel (Dual)	1.2 V	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00