Discrete Semiconductor Products

2SD882-Y-BP

Obsolete

TRANS NPN 30V 3A TO-126

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 30V 3A TO-126

Technical Specifications

Parameters and characteristics for this part

Specification	2SD882-Y-BP

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.25 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Frequency - Transition
Micro Commercial Components 2SD882-Y-BP	160	3 A	500 mV	NPN	Through Hole	1.25 W	30 V	TO-126-3 TO-225AA	1 µA	-55 °C	150 °C	TO-126	50 MHz
Micro Commercial Components 2SD882-O-BP	100	3 A	500 mV	NPN	Through Hole	1.25 W	30 V	TO-126-3 TO-225AA	1 µA	-55 °C	150 °C	TO-126	50 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 30 V 3 A 50MHz 1.25 W Through Hole TO-126

Technical documentation and resources