Discrete Semiconductor Products

SGB15N60HSATMA1

Obsolete

IGBT 600V 27A 138W TO263-3

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Discrete Semiconductor Products

Obsolete

IGBT 600V 27A 138W TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SGB15N60HSATMA1

Current - Collector (Ic) (Max) [Max]	27 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	80 nC
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]	138 W
Supplier Device Package	PG-TO263-3-2
Switching Energy	530 µJ
Td (on/off) @ 25°C	209 ns, 13 ns
Test Condition	15 A, 400 V, 15 V, 23 Ohm
Vce(on) (Max) @ Vge, Ic	3.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector Pulsed (Icm)	Test Condition	Mounting Type	Switching Energy	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Supplier Device Package	Power - Max [Max]	Gate Charge	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]
INFINEON SGB15N60HSATMA1	60 A	15 A 15 V 23 Ohm 400 V	Surface Mount	530 µJ	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	-55 °C	NPT	27 A	600 V	3.15 V	13 ns 209 ns	PG-TO263-3-2	138 W	80 nC
INFINEON SGB15N120ATMA1	52 A	15 V 15 A 33 Ohm 800 V	Surface Mount	1.9 mJ	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	-55 °C	NPT	30 A	1200 V	3.6 V		PG-TO263-3-2	198 W	130 nC	580 ns	18 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT NPT 600 V 27 A 138 W Surface Mount PG-TO263-3-2

Technical documentation and resources