Specification	ADPA9007ACGZN-R7

Current - Supply	500 mA
Frequency (Max)	28 GHz
Frequency (Min)	0 Hz
Gain	12 dB
Mounting Type	Surface Mount
Noise Figure	4.5 dB
P1dB	33 dBm
Package / Case	CSP, 32-LFQFN Exposed Pad
Package Length	5 mm
Package Name	32-LFCSP-CAV
Package Width	5 mm
RF Type	Radar
Test Frequency (Maximum)	16 GHz
Test Frequency (Minimum)	2 GHz
Voltage - Supply (Maximum)	15 V
Voltage - Supply (Minimum)	10 VDC

ADPA9007 Series

DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier

Part	Current - Supply	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Gain	Mounting Type	P1dB	Noise Figure	Package Name	Package Length	Package Width	Test Frequency (Maximum)	Test Frequency (Minimum)	Package / Case	Frequency (Min)	Frequency (Max)	RF Type
Analog Devices Inc./Maxim Integrated ADPA9007ACGZN-R7	500 mA	10 VDC	15 V	12 dB	Surface Mount	33 dBm	4.5 dB	32-LFCSP-CAV	5 mm	5 mm	16 GHz	2 GHz	32-LFQFN Exposed Pad CSP	0 Hz	28 GHz	Radar
Analog Devices Inc./Maxim Integrated ADPA9007ACGZN	500 mA	10 VDC	15 V	12 dB	Surface Mount	33 dBm	4.5 dB	32-LFCSP-CAV	5 mm	5 mm	16 GHz	2 GHz	32-LFQFN Exposed Pad CSP	0 Hz	28 GHz	Radar

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tape & Reel (TR)	500	$ 249.01	<1d

CAD

3D models and CAD resources for this part

Description

General part information

ADPA9007 Series

The ADPA9007 is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally-matched and DC-coupled. The ADPA9007 includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.The ADPA9007 amplifier provides a gain of 12.5 dB, an output power for 1 dB compression (OP1dB) of 33 dBm, and an output third-order intercept (OIP3) of 45 dBm from 2 GHz to 16 GHz. The amplifier operates from a typical supply voltage of 15 V and has a 500 mA typical quiescent bias current, which is adjustable.The ADPA9007 is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process. The amplifier is housed in an RoHS-compliant, 32-Lead, 5 mm × 5 mm, lead frame chip scale package, premolded cavity [LFCSP_CAV] and is specified for operation from −40°C to +85°C.ApplicationsElectronic warfareRadarTest and measurement equipment

Documents

Technical documentation and resources

ADPA9007ACGZN-R7 | Datasheet

Datasheet

Package Drawing - 32-Lead LFCSP (5mm x 5mm w/ EP)

Package Drawing