Specification	SSM6J825R,LF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds	492 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2 V

SSM6J825R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs

Part	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage SSM6J825R,LF	1.5 W	Surface Mount	150 °C	6-TSOP-F	45 mOhm	10 V	-20 V	2 V	6-SMD Flat Leads	30 V	MOSFET (Metal Oxide)	4 V	10 V	P-Channel	492 pF	6.2 nC	4 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5896	$ 0.57

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs

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