Discrete Semiconductor Products

SI6954ADQ-T1-GE3

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MOSFET 2N-CH 30V 3.1A 8TSSOP

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 3.1A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6954ADQ-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	16 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	830 mW
Rds On (Max) @ Id, Vgs	53 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Power - Max [Max]	Package / Case	Package / Case [custom]	Package / Case [custom]	Current - Continuous Drain (Id) @ 25°C	Configuration	FET Feature
Vishay General Semiconductor - Diodes Division SI6954ADQ-T1-GE3	16 nC	53 mOhm	8-TSSOP	-55 °C	150 °C	Surface Mount	1 V	30 V	MOSFET (Metal Oxide)	830 mW	8-TSSOP	0.173 "	4.4 mm	3.1 A	2 N-Channel (Dual)	Logic Level Gate

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General part information

Mosfet Array 30V 3.1A 830mW Surface Mount 8-TSSOP

Technical documentation and resources