Discrete Semiconductor Products

MPQ2222A PBFREE

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BIPOLAR TRANSISTORS - BJT NPN 75VCBO 40VCEO 6.0VEBO 500MA 650MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT NPN 75VCBO 40VCEO 6.0VEBO 500MA 650MW

Technical Specifications

Parameters and characteristics for this part

Specification	MPQ2222A PBFREE

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	14-DIP
Package / Case	0.3 in
Package / Case	7.62 mm
Power - Max [Max]	650 mW
Supplier Device Package	TO-116
Transistor Type	4 NPN (Quad)
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Frequency - Transition	Package / Case	Package / Case	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Current - Collector (Ic) (Max) [Max]
Central Semiconductor Corp MPQ2222A PBFREE	1 V	10 nA	TO-116	40 V	650 mW	Through Hole	200 MHz	14-DIP	0.3 in	7.62 mm	100 hFE	150 °C	-65 °C	4 NPN (Quad)	500 mA
Central Semiconductor Corp MPQ2222 PBFREE		50 nA	TO-116	40 V	650 mW	Through Hole	200 MHz	14-DIP	0.3 in	7.62 mm	100 hFE	150 °C	-65 °C	4 NPN (Quad)	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 4 NPN (Quad) 40V 500mA 200MHz 650mW Through Hole TO-116

Technical documentation and resources