Discrete Semiconductor Products

SFS1006G

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DIODE GEN PURP 400V 10A TO263AB

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Discrete Semiconductor Products

Active

DIODE GEN PURP 400V 10A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	SFS1006G

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Capacitance @ Vr, F	Current - Average Rectified (Io)	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Mounting Type
Taiwan Semiconductor Corporation SFS1006G	150 °C	-55 °C	200 mA 500 ns	50 pF	10 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)	1 µA	1.3 V	Standard	400 V	35 ns	Surface Mount

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General part information

Diode 400 V 10A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources