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Technical Specifications
Parameters and characteristics for this part
| Specification | R5205CNDTL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 525 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 320 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs | 1.6 Ohm |
| Supplier Device Package | CPT3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.86 | |
Description
General part information
R5205 Series
R5205PND3FRA is an automotive grade MOSFET that is AEC-Q101 qualified. A Nch 525V MOSFET with ESD protection diode is included in the TO-252 package. Ideal for switching applications.
Documents
Technical documentation and resources
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