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SOT89
Discrete Semiconductor Products

BST62,115

Active
Nexperia USA Inc.

DARLINGTON TRANSISTORS N-CHANNEL TRENCHMOS INTERMEDIATE LEVEL FET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsReflow soldering profilePower Derating Curves for SMDs; General+12
SOT89
Discrete Semiconductor Products

BST62,115

Active
Nexperia USA Inc.

DARLINGTON TRANSISTORS N-CHANNEL TRENCHMOS INTERMEDIATE LEVEL FET

Deep-Dive with AI

DocumentsReflow soldering profilePower Derating Curves for SMDs; General+12

Technical Specifications

Parameters and characteristics for this part

SpecificationBST62,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]2000
Frequency - Transition200 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1.3 W
QualificationAEC-Q101
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic1.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.33
141700$ 0.36
MouserN/A 1$ 0.65
10$ 0.57
100$ 0.38
500$ 0.34
1000$ 0.28
2000$ 0.25
5000$ 0.23
10000$ 0.19

Description

General part information

BST62 Series

PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.