Specification	RN2311,LXHF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-323, SC-70
Power - Max [Max]	100 mW
Resistor - Base (R1)	10 kOhms
Supplier Device Package	SC-70
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

RN2311 Series

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Resistor - Base (R1)	Package / Case
Toshiba Semiconductor and Storage RN2311,LXHF	100 mW	100 nA	200 MHz	300 mV	PNP - Pre-Biased	SC-70	100 mA	120	50 V	Surface Mount	10 kOhms	SC-70 SOT-323
Toshiba Semiconductor and Storage RN2311(TE85L,F)	100 mW	100 nA	200 MHz	300 mV	PNP - Pre-Biased	SC-70	100 mA	120	50 V	Surface Mount	10 kOhms	SC-70 SOT-323
Toshiba Semiconductor and Storage RN2311,LF	100 mW	100 nA	200 MHz	300 mV	PNP - Pre-Biased	SC-70	100 mA	120	50 V	Surface Mount	10 kOhms	SC-70 SOT-323

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70

Technical documentation and resources