Technical Specifications
Parameters and characteristics for this part
| Specification | AUIRFN8458TR |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 43 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1060 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power - Max [Max] | 34 W |
| Rds On (Max) @ Id, Vgs | 10 mOhm |
| Supplier Device Package | PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 2.44 | |
Description
General part information
AUIRFN8458 Series
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.
Documents
Technical documentation and resources