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SI2102AHE3-TP
Discrete Semiconductor Products

SI2102AHE3-TP

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SI2102AHE3-TP
Discrete Semiconductor Products

SI2102AHE3-TP

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSI2102AHE3-TP
Current - Continuous Drain (Id) @ 25°C2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.2 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]210 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 C
Package / CaseSOT-323, SC-70
Power Dissipation (Max) [Max]350 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]80 mOhm
Supplier Device PackageSOT-323
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 3000$ 0.05
3000$ 0.05
N/A 0$ 0.07
0$ 0.07

Description

General part information

SI2102 Series

N-Channel 20 V 2A (Ta) 350mW Surface Mount SOT-323

Documents

Technical documentation and resources