Discrete Semiconductor Products

BCW68GE6327HTSA1

LTB

TRANS PNP 45V 0.8A SOT23

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Discrete Semiconductor Products

LTB

TRANS PNP 45V 0.8A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BCW68GE6327HTSA1

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	PG-SOT23
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	45 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type
INFINEON BCW68GE6327HTSA1	160	200 MHz	Surface Mount	45 V	SC-59 SOT-23-3 TO-236-3	330 mW	800 mA	150 °C	PG-SOT23	20 nA	700 mV	PNP
INFINEON BCW68FE6327HTSA1	100	200 MHz	Surface Mount	45 V	SC-59 SOT-23-3 TO-236-3	330 mW	800 mA	150 °C	PG-SOT23	20 nA	700 mV	PNP
INFINEON BCW68HE6327HTSA1	250	200 MHz	Surface Mount	45 V	SC-59 SOT-23-3 TO-236-3	330 mW	800 mA	150 °C	PG-SOT23	20 nA	700 mV	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 45 V 800 mA 200MHz 330 mW Surface Mount PG-SOT23

Technical documentation and resources