Discrete Semiconductor Products

CMS04(TE12L,Q,M)

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X35 PB-F DIODE M-FLAT MOQ=3000 V=30V F=60HZ ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

X35 PB-F DIODE M-FLAT MOQ=3000 V=30V F=60HZ ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	CMS04(TE12L,Q,M)

Capacitance @ Vr, F	330 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	8 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-128
Speed	500 ns, 200 mA
Supplier Device Package	M-FLAT
Supplier Device Package [x]	2.4
Supplier Device Package [y]	3.8
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V

Diodes, 30 V/5 A Schottky Barrier Diode, M-FLAT

Part	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Capacitance @ Vr, F	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
Toshiba Semiconductor and Storage CMS04(TE12L,Q,M)	200 mA 500 ns	-40 °C	125 °C	M-FLAT	2.4	3.8	8 mA	SOD-128	Surface Mount	330 pF	5 A	Schottky	30 V
Toshiba Semiconductor and Storage CMS04(TE12L)	200 mA 500 ns	-40 °C	125 °C	M-FLAT	2.4	3.8	8 mA	SOD-128	Surface Mount		5 A	Schottky	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes, 30 V/5 A Schottky Barrier Diode, M-FLAT

Technical documentation and resources