Discrete Semiconductor Products

IPD49CN10N G

Obsolete

MOSFET N-CH 100V 20A TO252-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 20A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD49CN10N G

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1090 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	44 W
Rds On (Max) @ Id, Vgs	49 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)
INFINEON IPD49CN10N G	49 mOhm	N-Channel	100 V	Surface Mount	MOSFET (Metal Oxide)	44 W	20 A	PG-TO252-3	175 °C	-55 °C	10 V	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	16 nC	1090 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.42

General part information

N-Channel 100 V 20A (Tc) 44W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources