Discrete Semiconductor Products

TSM60N900CP ROG

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 600V 4.5A TO252

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Discrete Semiconductor Products

TSM60N900CP ROG

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 600V 4.5A TO252

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TSM60N900CP ROG

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9.7 nC
Input Capacitance (Ciss) (Max) @ Vds	480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

TSM60 Series

Part	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max) [Max]
Taiwan Semiconductor Corporation TSM60NC165CI C0G	ITO-220	Through Hole	5 V	N-Channel	MOSFET (Metal Oxide)	24 A	600 V	30 V	44 nC	150 °C	-55 °C	165 mOhm	10 V	TO-220-3 Full Pack Isolated Tab	1857 pF
Taiwan Semiconductor Corporation TSM60N600CI C0G	ITO-220AB	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	8 A	600 V	30 V		150 °C	-55 °C	600 mOhm	10 V	TO-220-3 Full Pack Isolated Tab		743 pF	83 W	13 nC
Taiwan Semiconductor Corporation TSM60NB190CI	ITO-220	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	18 A	600 V	30 V	31 nC	150 °C	-55 °C	190 mOhm	10 V	TO-220-3 Full Pack Isolated Tab		1273 pF	33.8 W
Taiwan Semiconductor Corporation TSM60NB600CH	TO-251	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	7 A	600 V	30 V		150 °C	-55 °C	600 mOhm	10 V	IPAK TO-251-3 Short Leads TO-251AA	516 pF		63 W	13 nC	IPAK
Taiwan Semiconductor Corporation TSM60N900CP ROG	TO-252 (DPAK)	Surface Mount	4 V	N-Channel	MOSFET (Metal Oxide)	4.5 A	600 V	30 V		150 °C	-55 °C	900 mOhm	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	480 pF		50 W	9.7 nC
Taiwan Semiconductor Corporation TSM60N750CP ROG	TO-252 (DPAK)	Surface Mount	4 V	N-Channel	MOSFET (Metal Oxide)	6 A	600 V	30 V	10.8 nC	150 °C	-55 °C	750 mOhm	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		554 pF				62.5 W
Taiwan Semiconductor Corporation TSM60NB380CF C0G	ITO-220S	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	11 A	600 V	30 V	21 nC	150 °C	-55 °C	380 mOhm	10 V	TO-220-3 Full Pack	810 pF					62.5 W
Taiwan Semiconductor Corporation TSM60NB099PW C1G	TO-247	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	38 A	600 V	30 V	62 nC	150 °C	-55 °C	99 mOhm	10 V	TO-247-3		2587 pF	329 W
Taiwan Semiconductor Corporation TSM60NC620CH C5G	TO-251	Through Hole	5 V	N-Channel	MOSFET (Metal Oxide)	7 A	600 V	20 V	15 nC	150 °C	-55 °C	620 mOhm	10 V	IPAK TO-251-3 Short Leads TO-251AA		501 pF	78 W		IPAK
Taiwan Semiconductor Corporation TSM60NB099CF C0G	ITO-220S	Through Hole	4 V	N-Channel	MOSFET (Metal Oxide)	38 A	600 V	30 V	62 nC	150 °C	-55 °C	99 mOhm	10 V	TO-220-3 Full Pack		2587 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.90

Description

General part information

TSM60 Series

N-Channel 600 V 4.5A (Tc) 50W (Tc) Surface Mount TO-252 (DPAK)

Documents

Technical documentation and resources

No documents available