Discrete Semiconductor Products

SPB07N60C3ATMA1

Obsolete

MOSFET N-CH 650V 7.3A TO263-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 7.3A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPB07N60C3ATMA1

Current - Continuous Drain (Id) @ 25°C	7.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Technology	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON SPB07N60C3ATMA1	MOSFET (Metal Oxide)	20 V	83 W	600 mOhm	650 V	N-Channel	7.3 A	150 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	PG-TO263-3-2	Surface Mount	10 V	27 nC	3.9 V	790 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 650 V 7.3A (Tc) 83W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources