Discrete Semiconductor Products

SIR412DP-T1-GE3

Obsolete

MOSFET N-CH 25V 20A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 20A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR412DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	16 nC
Input Capacitance (Ciss) (Max)	600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	15.6 W, 3.9 W
Rds On (Max)	12 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Vgs (Max)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Technology	Rds On (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)
Vishay Dale SIR412DP-T1-GE3	20 V	PowerPAK® SO-8	10 V	4.5 V	Surface Mount	20 A	25 V	PowerPAK® SO-8	3.9 W 15.6 W	N-Channel	-55 °C	150 °C	2.5 V	MOSFET (Metal Oxide)	12 mOhm	600 pF	16 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 25 V 20A (Tc) 3.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources