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PBHV8140Z,115
Discrete Semiconductor Products

PBHV8140Z,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 500 V, 1 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

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Search across all available documentation for this part.

DocumentsPBHV8140Z,115 | Datasheetplastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body+8
PBHV8140Z,115
Discrete Semiconductor Products

PBHV8140Z,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 500 V, 1 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

Deep-Dive with AI

DocumentsPBHV8140Z,115 | Datasheetplastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body+8

Technical Specifications

Parameters and characteristics for this part

SpecificationPBHV8140Z,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]35
Frequency - Transition25 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]1.45 W
QualificationAEC-Q100
Supplier Device PackageSOT-223
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 21047$ 1.04
MouserN/A 1$ 0.64
10$ 0.46
100$ 0.34
500$ 0.26
1000$ 0.19
2000$ 0.17
5000$ 0.17
10000$ 0.16

Description

General part information

PBHV8140Z Series

NPN high-voltage low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.