Discrete Semiconductor Products

SUD35N10-26P-BE3

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MOSFET N-CH 100V 12A/35A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 12A/35A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SUD35N10-26P-BE3

Current - Continuous Drain (Id) @ 25°C	35 A, 12 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	8.3 W, 83 W
Rds On (Max) @ Id, Vgs [Max]	26 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4.4 V

Part	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type
Vishay General Semiconductor - Diodes Division SUD35N10-26P-BE3	4.4 V	8.3 W 83 W	-55 °C	175 ░C	TO-252AA	Surface Mount	12 A 35 A	20 V	100 V	26 mOhm	MOSFET (Metal Oxide)	2000 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel
Vishay General Semiconductor - Diodes Division SUD35N10-26P-GE3	4.4 V	8.3 W 83 W	-55 °C	175 ░C	TO-252AA	Surface Mount	35 A	20 V	100 V	26 mOhm	MOSFET (Metal Oxide)	2000 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel

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General part information

N-Channel 100 V 12A (Ta), 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252AA

Technical documentation and resources