Discrete Semiconductor Products

AOT460

Obsolete

MOSFET N-CH 60V 85A TO220

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 85A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT460

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	88 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4560 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	268 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Alpha & Omega Semiconductor Inc. AOT460	TO-220	175 °C	-55 °C	10 V	20 V	88 nC	N-Channel	7.5 mOhm	MOSFET (Metal Oxide)	4560 pF	Through Hole	60 V	85 A	TO-220-3	268 W	4 V
Alpha & Omega Semiconductor Inc. AOT462	TO-220	175 °C	-55 °C	10 V	20 V		N-Channel	18 mOhm	MOSFET (Metal Oxide)		Through Hole	60 V	70 A	TO-220-3	100 W	4 V	36 nC	2400 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00