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Technical Specifications
Parameters and characteristics for this part
| Specification | UM6J1NTN |
|---|---|
| Configuration | 2 P-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 200 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Input Capacitance (Ciss) (Max) @ Vds | 30 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-363, SC-88, 6-TSSOP |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm |
| Supplier Device Package | UMT6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
UM6J1N Series
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources