Discrete Semiconductor Products

PEMT1,315

NRND

TRANS 2PNP 40V 0.1A SOT666

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Discrete Semiconductor Products

NRND

TRANS 2PNP 40V 0.1A SOT666

Technical Specifications

Parameters and characteristics for this part

Specification	PEMT1,315

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Supplier Device Package	SOT-666
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max)	40 V

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Package / Case	Power - Max [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic
Freescale Semiconductor - NXP PEMT1,315	100 nA	120	150 °C	SOT-563 SOT-666	300 mW	2 PNP (Dual)	40 V	SOT-666	Surface Mount	100 mA	100 MHz	200 mV
Freescale Semiconductor - NXP PEMT1,115	100 nA	120	150 °C	SOT-563 SOT-666	300 mW	2 PNP (Dual)	40 V	SOT-666	Surface Mount	100 mA	100 MHz	200 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 100mA 100MHz 300mW Surface Mount SOT-666

Technical documentation and resources