Discrete Semiconductor Products

PEMT1,315

NRND

TRANS GP BJT PNP 40V 0.1A 300MW 6-PIN SOT-666 T/R

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Discrete Semiconductor Products

NRND

TRANS GP BJT PNP 40V 0.1A 300MW 6-PIN SOT-666 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	PEMT1,315

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	300 mW
Supplier Device Package	SOT-666
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PNP/PNP general purpose double transistor

Part	Mounting Type	Power - Max [Max]	Operating Temperature	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition
Nexperia USA Inc. PEMT1,315	Surface Mount	300 mW	150 °C	SOT-563 SOT-666	100 mA	100 nA	40 V	SOT-666	200 mV	2 PNP (Dual)	120	100 MHz
Nexperia USA Inc. PEMT1,115	Surface Mount	300 mW	150 °C	SOT-563 SOT-666	100 mA	100 nA	40 V	SOT-666	200 mV	2 PNP (Dual)	120	100 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP/PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources