Integrated Circuits (ICs)

IR2104PBF

NRND

EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.21 A SOURCE AND 0.36 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PDIP8 PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: ENABLE, SHOOT THROUGH PROTECTION, SHUTDOWN, SINGLE INPUT

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DocumentsApplication Note EN Technical Data Sheet EN +1

Integrated Circuits (ICs)

IR2104PBF

NRND

INFINEON

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DocumentsApplication Note EN Technical Data Sheet EN +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2104PBF

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	210 mA
Current - Peak Output (Source, Sink) [custom]	360 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ)	100 ns, 50 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2104 Series

Part	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Channel Type	Rise / Fall Time (Typ)	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case	Package / Case	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Drivers	Logic Voltage - VIL, VIH	Input Type	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration
INFINEON IR2104S	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Surface Mount	Synchronous	50 ns 100 ns	210 mA	360 mA	0.154 in	8-SOIC	3.9 mm	8-SOIC	20 V	10 VDC	2	0.8 V 3 V	Non-Inverting	600 V	Half-Bridge
INFINEON IR2104STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Surface Mount	Synchronous	50 ns 100 ns	210 mA	360 mA	0.154 in	8-SOIC	3.9 mm	8-SOIC	20 V	10 VDC	2	0.8 V 3 V	Non-Inverting	600 V	Half-Bridge
INFINEON IR2104STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Surface Mount	Synchronous	50 ns 100 ns	210 mA	360 mA	0.154 in	8-SOIC	3.9 mm	8-SOIC	20 V	10 VDC	2	0.8 V 3 V	Non-Inverting	600 V	Half-Bridge
INFINEON IR2104PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Through Hole	Synchronous	50 ns 100 ns	210 mA	360 mA		8-DIP (0.300" 7.62mm)		8-PDIP	20 V	10 VDC	2	0.8 V 3 V	Non-Inverting	600 V	Half-Bridge
INFINEON IR2104SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	-40 °C	150 °C	Surface Mount	Synchronous	50 ns 100 ns	210 mA	360 mA	0.154 in	8-SOIC	3.9 mm	8-SOIC	20 V	10 VDC	2	0.8 V 3 V	Non-Inverting	600 V	Half-Bridge

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2303	$ 3.32
	Tube	1	$ 3.48
		10	$ 3.12
		50	$ 2.95
		100	$ 2.56
		250	$ 2.43
		500	$ 2.18
		1000	$ 1.84
		2500	$ 1.74
		5000	$ 1.68
Newark	Each	1	$ 2.12

Description

General part information

IR2104 Series

The IR2104PBF is a high voltage, high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600V.

Documents

Technical documentation and resources

Application Note EN

Datasheet

Technical Data Sheet EN

Datasheet