Discrete Semiconductor Products

IRF8306MTRPBF

Obsolete

MOSFET N-CH 30V 23A DIRECTFET

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 23A DIRECTFET

Technical Specifications

Parameters and characteristics for this part

Specification	IRF8306MTRPBF

Current - Continuous Drain (Id) @ 25°C	140 A, 23 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MX
Power Dissipation (Max)	2.1 W, 75 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	DIRECTFET™ MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Feature	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IRF8306MTRPBF	2.35 V	4110 pF	DIRECTFET™ MX	-40 °C	150 °C	2.5 mOhm	38 nC	MOSFET (Metal Oxide)	Surface Mount	DirectFET™ Isometric MX	N-Channel	23 A 140 A	2.1 W 75 W	Schottky Diode (Body)	20 V	30 V	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 23A (Ta), 140A (Tc) 2.1W (Ta), 75W (Tc) Surface Mount DIRECTFET™ MX

Technical documentation and resources