Specification	EMG9T2R

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 hFE
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	6-SMD (5 Leads), Flat Leads
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	EMT5
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

EMG9T2 Series

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Emitter Base (R2)	Transistor Type	Mounting Type	Package / Case
Rohm Semiconductor EMG9T2R	30 hFE	500 nA	250 MHz	300 mV	EMT5	100 mA	50 V	10 kOhms	2 NPN - Pre-Biased (Dual)	Surface Mount	6-SMD (5 Leads) Flat Leads

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5