Discrete Semiconductor Products

IPW65R041CFDFKSA1

Obsolete

MOSFET N-CH 650V 68.5A TO247-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 68.5A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R041CFDFKSA1

Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	300 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Mounting Type	Package / Case	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Power Dissipation (Max)	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id
INFINEON IPW65R041CFD7XKSA1	Through Hole	TO-247-3	20 V	150 °C	-55 °C	PG-TO247-3	227 W	MOSFET (Metal Oxide)	N-Channel	50 A	650 V	10 V	41 mOhm	102 nC	4975 pF
INFINEON IPW65R041CFDFKSA1	Through Hole	TO-247-3	20 V	150 °C	-55 °C	PG-TO247-3-1	500 W	MOSFET (Metal Oxide)	N-Channel		650 V	10 V	41 mOhm	300 nC		8400 pF	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 11.03

General part information

N-Channel 650 V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3-1

Technical documentation and resources