Discrete Semiconductor Products

VS-40HF100

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DIODE GEN PURP 1KV 40A DO203AB

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Discrete Semiconductor Products

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DIODE GEN PURP 1KV 40A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-40HF100

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	9 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-5, DO-203AB
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-203AB
Supplier Device Package	DO-5
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Part	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed [Min]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]
Vishay General Semiconductor - Diodes Division VS-40HF100	DO-203AB DO-5 Stud	190 °C	-65 C	200 mA 500 ns	Chassis Stud Mount	1000 V	40 A	Standard	9 mA	DO-203AB	DO-5	1.3 V

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General part information

Diode 1000 V 40A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources