Discrete Semiconductor Products

SI8435DB-T1-E1

Obsolete

MOSFET P-CH 20V 10A 4MICROFOOT

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 10A 4MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8435DB-T1-E1

Current - Continuous Drain (Id) (Tc)	10 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	35 nC, 35 nC
Input Capacitance (Ciss) (Max)	1600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	CSPBGA, 4-XFBGA
Package Name	4-Microfoot
Power Dissipation (Max)	6.25 W, 2.78 W
Rds On (Max)	41 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	1 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	FET Type	Rds On (Max)	Gate Charge (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Technology	Package Name	Current - Continuous Drain (Id) (Tc)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SI8435DB-T1-E1	-55 °C	150 °C	2.78 W 6.25 W	P-Channel	41 mOhm	35 nC 35 nC	5 V	20 V	Surface Mount	1 V	1600 pF	MOSFET (Metal Oxide)	4-Microfoot	10 A	4-XFBGA CSPBGA	4.5 V	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.40	1m+

3D models and CAD resources for this part

General part information

P-Channel 20 V 10A (Tc) 2.78W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

Technical documentation and resources

No documents available