Discrete Semiconductor Products

SQM60030E_GE3

LTB

MOSFET N-CH 80V 120A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 80V 120A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SQM60030E_GE3

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	165 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	12000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	375 W
Qualification	AEC-Q101
Rds On (Max)	3.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Qualification	Input Capacitance (Ciss) (Max)	Technology	Current - Continuous Drain (Id) (Tc)	Grade	Package Name	Vgs (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Package / Case
Vishay Dale SQM60030E_GE3	-55 °C	175 °C	N-Channel	AEC-Q101	12000 pF	MOSFET (Metal Oxide)	120 A	Automotive	TO-263 (D2PAK)	20 V	3.2 mOhm	80 V	165 nC	3.5 V	10 V	375 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 3.69	1m+
		10	$ 3.10
		100	$ 2.51
	Digi-Reel®	1	$ 3.69	1m+
		10	$ 3.10
		100	$ 2.51
	N/A	0	$ 0.00	1m+
	Tape & Reel (TR)	800	$ 2.23	1m+
		1600	$ 1.91
		2400	$ 1.80
		5600	$ 1.72

3D models and CAD resources for this part

General part information

N-Channel 80 V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources