Discrete Semiconductor Products

PG601R_R2_00001

NRND

DIODE GEN PURP 100V 6A P600

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Discrete Semiconductor Products

NRND

DIODE GEN PURP 100V 6A P600

Technical Specifications

Parameters and characteristics for this part

Specification	PG601R_R2_00001

Capacitance @ Vr, F	300 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-50 °C
Package / Case	P600, Axial
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	P600
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Capacitance @ Vr, F	Speed
Panjit International Inc. PG601R_R2_00001	P600 Axial	6 A	100 V	1.3 V	150 ns	1 µA	P600	Through Hole	-50 °C	150 °C	Standard	300 pF	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	60000	$ 0.17

General part information

Diode 100 V 6A Through Hole P600

Technical documentation and resources