Discrete Semiconductor Products
SPD30P06PGBTMA1
ActiveINFINEON
SMALL SIGNAL P-CHANNEL POWER MOSFET -30 V ; DPAK TO-252 PACKAGE; 75 MOHM;
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Discrete Semiconductor Products
SPD30P06PGBTMA1
ActiveINFINEON
SMALL SIGNAL P-CHANNEL POWER MOSFET -30 V ; DPAK TO-252 PACKAGE; 75 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SPD30P06PGBTMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1535 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 155 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 125 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 75 mOhm |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
XPD30P06 Series
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Documents
Technical documentation and resources