Discrete Semiconductor Products

DZ435N40KS01HPSA1

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DIODE GEN PURP 4KV 700A PB501-1

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Discrete Semiconductor Products

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DIODE GEN PURP 4KV 700A PB501-1

Technical Specifications

Parameters and characteristics for this part

Specification	DZ435N40KS01HPSA1

Current - Average Rectified (Io)	700 A
Current - Reverse Leakage @ Vr	50 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	Module
Speed [Min]	200 mA, 500 ns
Supplier Device Package	BG-PB501-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	4000 V

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Technology	Speed [Min]	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]
INFINEON DZ435N40KHPSA1	-40 °C	150 °C	50 mA	700 A	Module	Standard	200 mA 500 ns	Chassis Mount	Module	1.71 V	4000 V
INFINEON DZ435N40KS01HPSA1		150 °C	50 mA	700 A	Module	Standard	200 mA 500 ns	Chassis Mount	BG-PB501-1		4000 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 4000 V 700A Chassis Mount BG-PB501-1

Technical documentation and resources